c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wt wt wt wt f16 f16 f16 f16 a60 a60 a60 a60 -s -s -s -s rev.a oct .201 1 bi-directional bi-directional bi-directional bi-directional triode triode triode triode thyristor thyristor thyristor thyristor features ? repetitive peak off -state voltage:600v ? r.m.s on-state current(i t(rms) =16a) ? isolation voltage(v iso =1500v ac) ? high commutation dv/dt general description this device is fully isolated package suitable for ac switching application,phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.this device is approved to comply with applicable requirements by underwriters laboratories inc. by using an internal ceramic pad, the to220f series provides voltage insulated tab (rated at 2500v rms) complying with ul standards (file ref.:e347423) absolute maximum ratings (t j =25 unless otherwise specified) symbol param eter ratings units v drm peak repetitive forward blocking voltage(gate open) (note1) 600 v i t(rms) forward current rms(all conduction angles, t j =68 ) 16 a i tsm peak forward surge current, (1/2 cycle, sine wave,50/60hz) 155/170 a i 2 t circuit fusing considerations (tp=10ms) 120 a 2 s p gm peak gate power forward,(t c = 6 8 ,pulse with 1.0us) 5.0 w p g(av) average gate power forward,(over any 20ms period) 0.5 w i fgm peak gate current forward, t j =125 (20 s,120pps) 2.0 a v rgm peak gate voltage reverse,tj=125 (20 s,120pps) 10 v t j junction temperature -40~125 t stg storage temperature -40~150 mass 2.0 g note1.although not recommended off -state voltages up to 800v ,may be applied with out damage, but the triac may switch, to the on-state .the rate of rise of current should not exceed 3a/us. thermal characteristics symbol parameter value units r ? jc thermal resistance junction to case 3.0 /w r ? ja thermal resistance junction to ambient 120 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w t t t t f16 f16 f16 f16 a60 a60 a60 a60 -s -s -s -s 2 / 5 e lectrical characteristics (tc=25 unless otherwise specified ) symbol characteristics min. typ. max. unit i drm peak forward or reverse blocking current (v d =v drm /v rrm ) t c =25 - - 10 a t c =125 - - 2 ma v tm forward "on" voltage (note2) (i tm =25a peak @ ta =25 ) - - 1.4 v i gt gate trigger current (continuous dc) (v d =6 vdc,r l =10 ) t2+g+ t2+g- t2-g- - - - - - - 30 30 30 ma v gt gate trigger voltage (continuous dc) (v d =6 vdc,r l =10 o ) t2+g+ t2+g- t2-g- - - - - - - 1.5 1.5 1.5 v v gd gate threshold voltage (t j =125 , v d =0.5v drm ) 0.2 - - v dv/dt critical rate of rise of commutation voltage(v d =0.67v drm ) - 500 - v/ s (dv / d t ) c critical rate of rise on-state voltage a t co mm uta t i o n (v d =400v,t j =125 ,di com /dt=0.5a/ s) 10 - - a/ s i h holding current (v d =12vdc, intiationg current=20ma) - 30 - ma note2.forward current applied for 1 ms maximum duration ,duty cycle
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w t t t t f16 f16 f16 f16 a60 a60 a60 a60 -s -s -s -s 3 / 5 fig fig fig fig .1 .1 .1 .1 on-state on-state on-state on-state voltage voltage voltage voltage fig.2 fig.2 fig.2 fig.2 on-state on-state on-state on-state current current current current vs vs vs vs maximum maximum maximum maximum power power power power disspation disspation disspation disspation fig fig fig fig . . . . 3 3 3 3 gate gate gate gate characteristeristics characteristeristics characteristeristics characteristeristics fig.4 fig.4 fig.4 fig.4 on-state on-state on-state on-state current current current current vs vs vs vs allowable allowable allowable allowable case case case case temperature temperature temperature temperature fig.5 fig.5 fig.5 fig.5 surge surge surge surge on-state on-state on-state on-state current current current current ration ration ration ration (non-repetitive) (non-repetitive) (non-repetitive) (non-repetitive) gig.6 gig.6 gig.6 gig.6 gate gate gate gate trigger trigger trigger trigger voltage voltage voltage voltage vs vs vs vs junction junction junction junction temperation temperation temperation temperation
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w t t t t f16 f16 f16 f16 a60 a60 a60 a60 -s -s -s -s 4 / 5 fig.7 fig.7 fig.7 fig.7 gate gate gate gate trigger trigger trigger trigger current current current current vs vs vs vs junction junction junction junction . . . . fig.8 fig.8 fig.8 fig.8 transient transient transient transient thermal thermal thermal thermal impedance impedance impedance impedance fig.9 fig.9 fig.9 fig.9 gate gate gate gate trigger trigger trigger trigger characteristics characteristics characteristics characteristics test test test test circuit circuit circuit circuit
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w t t t t f16 f16 f16 f16 a60 a60 a60 a60 -s -s -s -s 5 / 5 to- to- to- to- 220f 220f 220f 220f package package package package dimension dimension dimension dimension unit:mm
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